AON6756 30v n-channel alphamos general description product summary v ds i d (at v gs =10v) 36a r ds(on) (at v gs =10v) < 2.4m w r ds(on) (at v gs = 4.5v) < 4m w application 100% uis tested 100% r g tested symbol v ds ? latest trench power alphamos ( mos lv) technology ? integrated schottky diode (srfet) ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 30 30v top view 12 3 4 87 6 5 pin1 dfn5x6 top view bottom view g ds srfet tm s oft r ecovery mos fet : integrated schottky diode v ds v gs i dm i as e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc v maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.1 55 1.5 a t a =25c power dissipation b p d 144 pulsed drain current c i dsm t c =25c w i d power dissipation a p dsm w t a =70c 83 4.7 t a =25c 7.3 36 28 t c =25c t c =100c 33 t c =100c 100ns 36 continuous drain current 90 47 a 60 avalanche energy l=0.05mh c a t a =70c v 20 gate-source voltage units junction and storage temperature range -55 to 150 mj avalanche current c continuous drain current g parameter v drain-source voltage 30 max 38 typ c thermal characteristics maximum junction-to-ambient a c/w r q ja 14 40 17 rev1: mar 2012 www.aosmd.com page 1 of 6
AON6756 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =125c 100 i gss 100 na v gs(th) gate threshold voltage 1.4 1.7 2.4 v 2 2.4 t j =125c 2.6 3.2 2.8 4 m w g fs 90 s v sd 0.39 0.6 v i s 36 a c iss 2796 pf c oss 1200 pf c rss 165 pf r g 0.7 1.5 2.3 w q g (10v) 46.8 64 nc q g (4.5v) 22.3 30 nc q gs 8.4 nc q gd 8.6 nc t d(on) 9.5 ns t r 6.3 ns t 35.8 ns forward transconductance r ds(on) static drain-source on-resistance diode forward voltage m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz v ds =v gs, i d =250 m a v ds =0v, v gs = 20v maximum body-diode continuous current g input capacitance gate-body leakage current dynamic parameters v gs =4.5v, i d =20a output capacitance switching parameters turn-on delaytime v gs =10v, v ds =15v, r l =0.75 w , r =3 w v gs =10v, v ds =15v, i d =20a turn-on rise time electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ma zero gate voltage drain current drain-source breakdown voltage i d =10ma, v gs =0v turn-off delaytime gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge gate source charge gate drain charge total gate charge t d(off) 35.8 ns t f 12.3 ns t rr 20 ns q rr 40 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s r gen =3 w i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev1: mar 2012 www.aosmd.com page 2 of 6
AON6756 typical electrical and thermal characteristics 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 4.5v 10v 4v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 1 2 3 4 5 6 7 8 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev1: mar 2012 www.aosmd.com page 3 of 6
AON6756 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =1.5 c/w rev1: mar 2012 www.aosmd.com page 4 of 6
AON6756 typical electrical and thermal characteristics 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note h) r q ja =55 c/w rev1: mar 2012 www.aosmd.com page 5 of 6
AON6756 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev1: mar 2012 www.aosmd.com page 6 of 6
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